sy m bol rs1abf rs1bbf rs1dbf rs1gbf rs1j bf rs1k bf RS1MBF unit sur ge overload rating to 30a peak features maximum ra t ings and electrical characteristics @t a =25c unl ess otherwise specified 1 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com smb f id eally suited for automatic assembly built-in strain relief classification rating 94v-o low power loss weight: 0.057 grams (approx.) features ! ! low f orward voltage drop ! ! ! ! plastic case material has ul flammability mechanical d a ta ! ! ter minals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! ! lead free: for rohs / lead free version 4.40 4.20 3.70 3.50 dim m i n max a b c d e f g all di m ensions in mm 0.26 0.18 5.50 5.10 1.30 1.10 1.00 - 2.20 1.90 case : smbf, molded plastic a b c d f e g rs1abf-RS1MBF characteristic 150 250 500 ns 1.3 v -65 to +150 c 35 70 140 280 420 560 700 v 50 100 200 400 600 800 1000 v peak repet itive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rms revers e voltage v r(rms) average rec tified output current @t l = 100c i o 1.0 a non-repetit ive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward v oltage @i f = 1.0a v fm pea k reverse current @t a = 25c a t rated dc blocking voltage @t a = 100 c i rm 10 500 a reverse reco very time (note 1) t rr typi cal junction capacitance (note 2) c j 15 pf typi cal thermal resistance (note 3) r jl 30 c / w operating and s torage temperature range t j, t stg note: 1. m easured with i f = 0.5a , i r = 1 . 0a, i rr = 0. 25a. see figure 5. 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 l and area. rs1abf-RS1MBF 1.0a s urf ace mount glass passivated fast recovery diode a l l d a t a s h e e t
2 of 2 rs1abf-RS1MBF rs1abf-RS1MBF z ibo seno electronic engineering co., ltd. www.senocn.com 0 0.4 1 . 2 25 50 75 100 125 150 175 i , a verage rectified current (a) o t , terminal tempera ture ( c) fig. 1 forward current derating curve t 0.2 0.6 0.8 1.0 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 i instant aneous forward current (a) f, v , inst antaneous forward voltage (v) fig .2 t ypical forward characteristics f t = 25c j i pulse width: 300 s f 0 10 20 30 1 10 100 i , peak for ward surge current (a ) fsm number of cycles a t 60hz fig. 3 forward surge current derating curve single half-sine-wave (jedec method) t = 150c j 50v dc approx 50 ni (non-inductive) ? 10 ni ? 1.0 ni ? oscilloscope (note 1) pulse generator (note 2) device under test t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . ? ? fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 i , inst ant aneous reverse current (a ) r percent of ra ted peak reverse voltage (%) fig .4 t ypical reverse characteristics t = 125 c j t = 25c j a l l d a t a s h e e t
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